Related papers: Dynamic negative capacitance regime in GeTe Rashba…
LiFeAs is one of the iron-based superconductors having multiple gaps with the possible sign reversal. To clarify how those novel natures affect the energy dissipation of magnetic vortices, we investigated the microwave surface impedance of…
Spin-orbit coupling is increasingly seen as a rich source of novel phenomena, as shown by the recent excitement around topological insulators and Rashba effects. We here show that the addition of ferroelectric degrees of freedom to a…
We demonstrate experimentally and theoretically that two-dimensional (2D) heavy hole systems in single heterostructures exhibit a \emph{decrease} in spin-orbit interaction-induced spin splitting with an increase in perpendicular electric…
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and…
We report a comprehensive investigation of CeGaSi single crystals, including magnetic, thermodynamic, electronic, and magnetotransport properties. The powder x-ray diffraction refinement revealed that CeGaSi crystallizes in LaPtSi-type…
Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament…
Recent experiments showed the distinct observations on the transition metal ditelluride NiTe$_2$ under pressure: one reported a superconducting phase transition at 12 GPa, whereas another observed a sign reversal of Hall resistivity at 16…
We have presented dynamic phase transition features and stationary-state behavior of a ferrimagnetic small nanoparticle system with a core-shell structure. By means of detailed Monte Carlo simulations, a complete picture of the phase…
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…
We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally…
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than…
The electron-hole symmetry in the structure "graphene - insulating substrate -semiconductor gate" is violated due to an asymmetrical drop of potential in the semiconductor gate under positive or negative biases. The gate voltage…
Recently synthesized metastable tetragonal CoSe, isostructural to the FeSe superconductor, offers a new avenue for investigating systems in close proximity to the iron-based superconductors. We present magnetic and transport property…
Platinum step edges dominate electrocatalytic activity in fuel cells and electrolysers, yet their atomistic electrochemical behaviour remains poorly understood. Here, we employ \textit{ab initio} molecular dynamics under controlled…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…
Varying the quantum-well width in an HgTe/CdTe heterostructure allows to realize normal and inverted semiconducting band structures, making it a prototypical system to study two-dimensional (2D) topological-insulator behavior. We have…
Extensive numerical calculations show that the capacitance of back-gated nanowires with various degrees of dielectric embeddings is accurately described with an effective dielectric constant as long as the difference between the dielectric…
The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured…
Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated…
Strong, direct Rashba spin-orbit coupling in Si, Ge, and the Ge/Si core/shell nanowire quantum dot (QD) allows for all electrical manipulation of the hole spin qubit. Motivated by this fact, we analyze different fabrication-dependent…