Related papers: Dynamic negative capacitance regime in GeTe Rashba…
Here, we report on angle-resolved photoemission studies of the electronic $\pi$ states of high-quality epitaxial graphene layer on a Ni(111) surface. In this system electron binding energy of the $\pi$ states shows a strong dependence on…
Randomly distributed traps at the MoS$_2$/SiO$_2$ interface result in non-ideal transport behavior, including hysteresis in MoS$_2$/SiO$_2$ field effect transistors (FETs). Thus traps are mostly detrimental to the FET performance but they…
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance…
Perovskite solar cells are notorious for exhibiting transient behaviour not seen in conventional inorganic semiconductor devices. Significant inroads have been made into understanding this fact in terms of rapid ion migration, now a…
A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and…
A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capacitance and device resistance are extracted for frequencies…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
We report anomalous physical properties of single-crystalline FeSi over a wide temperature range 1.8-400 K. X-ray diffraction, specific heat, and magnetization measurements indicate that the FeSi crystals synthesized in this study are of…
We present a comprehensive study of the vortex pinning and dynamics in a high-quality FeSe single crystal, which is free from doping introduced inhomogeneities and charged quasi-particle-scattering because of its innate superconductivity.…
The present study aims to investigate utilizing field-effect for inducing heterogeneous surface charge and consequently changing the fluid flow in a solid-state nanochannel with converging-diverging periodicity. It is shown that the…
A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function…
RhGe synthesized at high pressure is crystallized in noncentrosymmetric cubic structure of the B20 type. Measurements of the electrical resistivity and magnetization demonstrate a superconducting state below T$_c$ ~ 4.5 K and a weak…
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…
We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the…
We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower…
The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this…