We present results of transport properties measurement on a single crystal of V3Si showing distinct signature of peak-effect in its vortex state. The field variation of the electrical resistance in the flux-line lattice prepared by different experimental path, namely zero field cooling (ZFC) and field cooling (FC), shows a distinct path dependence in the vicinity of the peak-effect regime. In the field cooled state, small cycling of magnetic field modifies the resistance drastically around the peak-effect regime, highlighting the metastable nature of that state in the concerned regime.
@article{arxiv.cond-mat/0011100,
title = {Peak effect in the vortex state of V$_3$Si: a study of history dependence},
author = {Sujeet Chaudhary and A. K. Rajarajan and Kanwal Jeet Singh and S. B. Roy and P. Chaddah},
journal= {arXiv preprint arXiv:cond-mat/0011100},
year = {2009}
}