Related papers: Operation of Cs-Sb-O activated GaAs in a high volt…

Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation…

GaAs-based photocathodes are the only viable source capable of providing spin-polarized electrons for accelerator applications. This type of photocathode requires a thin surface layer, in order to achieve negative electron affinity (NEA)…

The high intensity polarized electron source is a critical component for future nuclear physics facilities. The Electron Ion Collider (EIC) requires a polarized electron gun with higher voltage and higher bunch charge compared to any…

Charge lifetime of strained superlattice GaAs photocathodes in DC guns is limited by ion back bombardment. It needs to be improved at least an order of magnitude to meet the requirements for future colliders such as Electron-Ion Collider…

We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that…

For short, high-intensity electron bunches, alkali-tellurides have proved to be a reliable photo-cathode material. Measurements of lifetimes in an RF gun of the CLIC Test Facility II at field strengths greater than 100 MV/m are presented.…

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from…

Superconducting radio-frequency (SRF) guns are promising candidates to deliver high brightness continuous-wave (CW) electron beams for new generations of coherent linac light sources, ultrafast electron diffractions, MeV pulsed beam…

The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…

Sub-picosecond ac spin current pulses are generated optically in GaAs bulk and quantum wells at room temperature and 90K through quantum interference between one-photon and two-photon absorptions driven by two phase-locked ultrafast laser…

The interaction of Laguerre-Gauusian light at select wavelengths from 690 to 810 nm with a p-type gallium arsenide (GaAs) photocathode photonic device and the production of photogenerated electrons was investigated. Spin angular momentum…

A new type of negative electron affinity (NEA) photocathode based on GaAs nanopillar array (NPA) Mie-type resonators was demonstrated for the first time. For visible wavelengths, the Mie resonances in GaAs NPA reduced light reflectivity to…

It is shown that focusing circularly-polarized 800 nm light pulses of 100 fs duration on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and…

Although accelerator technology has matured sufficiently, state-of-the-art X-ray linacs for radiotherapy and cargo-scanning capture merely 30-50% of the electrons from a thermionic cathode, requiring a higher cathode current and leaving…

Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the…

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly…

Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the…

This White Paper seeks to extend the applications of two weakly bound semiconductor materials, Cs3Sb and Ag-O-Cs first developed decades ago for vacuum photodetectors S1, S-11 photocathodes, respectively, proven to have low electron-hole…

In this work, we present a capacitively coupled GaAs p +-i-n/substrate photodetector (CC-GaAs PIN/S PD), which also represents a preliminary step toward 3D detection (x, y, time) of high-energy X-ray pulses. Although the final 3D detector…