Related papers: Smart Material Implication Using Spin-Transfer Tor…

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static…

Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…

Nanomagnetic logic, in which the outcome of a computation is embedded into the energy hierarchy of magnetostatically coupled nanomagnets, offers an attractive pathway to implement in-memory computation. This computational paradigm avoids…

The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…

We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence…

In combinatorial optimization, probabilistic Ising machines (PIMs) have gained significant attention for their acceleration of Monte Carlo sampling with the potential to reduce time-to-solution in finding approximate ground states. However,…

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…

The recently proposed probabilistic spin logic presents promising solutions to novel computing applications. Multiple cases of implementations, including invertible logic gate, have been studied numerically by simulations. Here we report an…

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice…

This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…

Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…

We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent…

Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable…

While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of different spintronic logic approaches, which use magnetic…

Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non-volatile memory, MTJs have received substantial attention due to its CMOS compatibility, low power…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…