Related papers: Smart Material Implication Using Spin-Transfer Tor…

A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM)…

We study current-induced switching in magnetic tunnel junctions (MTJs) in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the…

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…

We show that current induced magneto-logic gates like AND, OR and NOT can be designed with the simple architecture involving a single nano spin-valve pillar, as an extension of our recent work on spin-torque-driven magneto-logic universal…

In this paper, we propose a Spin-Torque (ST) based sensing scheme that can enable energy efficient multi-bit long distance interconnect architectures. Current-mode interconnects have recently been proposed to overcome the performance…

We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin…

The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…

In artificial neural networks, neurons are usually implemented with highly dissipative CMOS-based operational amplifiers. A more energy-efficient implementation is a 'spin-neuron' realized with a magneto-tunneling junction (MTJ) that is…

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

Neuromorphic computing aims to mimic both the function and structure of biological neural networks to provide artificial intelligence with extreme efficiency. Conventional approaches store synaptic weights in non-volatile memory devices…

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…

We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog…

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…

We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…

Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…

The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the…