Related papers: A Wide Dynamic Range Read-out System For Resistive…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
Deep learning hardware designs have been bottlenecked by conventional memories such as SRAM due to density, leakage and parallel computing challenges. Resistive devices can address the density and volatility issues, but have been limited by…
Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early…
In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND…
Various chips for the silicon sensors measurements are described. These chips are based on 0.35 um and 0.18um CMOS technology. Several analog chips together with self-trigger /derandomizer one allow to measure silicon sensors designed for…
Superconducting resonators enable fast characterization and readout of mesoscopic quantum devices. Finding ways to perform measurements of interest on such devices using resonators only is therefore of great practical relevance. We report…
Electronic systems are becoming more and more ubiquitous as our world digitises. Simultaneously, even basic components are experiencing a wave of improvements with new transistors, memristors, voltage/current references, data converters,…
We propose a novel setup for a spin-torque oscillator reader in magnetic hard disk drive technology. Two adjacent bit tracks are to be read simultaneously, leading to high data transfer rate and increased resilience to noise as the lateral…
We present an integrated circuit fabricated in a process co-integrating CMOS and hafnium-oxide memristor technology, which provides a prototyping platform for projects involving memristors. Our circuit includes the periphery circuitry for…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current…
A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…
For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching…
It is well-known that measuring the input voltage and current, as the feedforward and feedback terms, are vital for the controller design in the problem of power factor compensation of an AC-DC boost converter. Traditional adaptive…
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
Memristor device modeling is currently a heavily researched topic and is becoming ever more important as memristor devices make their way into CMOS circuit designs, necessitating accurate and efficient memristor circuit simulations. In this…