Related papers: Radiation damage uniformity in a SiPM
We present an extensive irradiation study involving five state-of-the-art Nb3Sn wires which were subjected to sequential neutron irradiation up to a fast neutron fluence of 1.6 * 10^22 m^-2 (E > 0.1 MeV). The volume pinning force of short…
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…
Radiation damage to a Silicon Photomultiplier (SiPM), as it occurs during the lifetime of the planned CMS high-granularity calorimeter detector, increases the dark current and degrades the signal-to-noise separation for minimum-ionizing…
A systematic study of isotopic effects in the break-up of projectile spectators at relativistic energies has been performed at the GSI laboratory with the ALADiN spectrometer coupled to the LAND neutron detector. Besides a primary beam of…
SmFeAsO$_{1-x}$F$_x$ was irradiated in a fission reactor to a fast (E > 0.1 MeV) neutron fluence of 4x10^${21}$ m$^{-2}$. The introduced defects increase the normal state resistivity due to a reduction in the mean free path of the charge…
Self-sputtering of copper under high electric fields is considered to contribute to plasma buildup during a vacuum breakdown event frequently observed near metal surfaces, even in ultra high vacuum condition in different electric devices.…
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices…
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is…
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$\Omega$cm are presented. Samples…
The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, $E{\gamma}$, between 0.95 and 1.3 eV. From the transmission data the absorption coefficient ${\alpha}$ is…
Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The…
Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the…
In this paper the efficiency of direct charged particle detection with different Silicon PhotoMultiplier (SiPM) sensors has been measured to be close to 100%. Time resolution of about 20 ps has also been confirmed for sensors with an active…
Using the transport and magnetization measurements the influence of neutron irradiation at a fluence of 5x10$^{17}$ n cm$^{-2}$ on (B0.65C0.35)Ba1.4Sr0.6Ca2Cu3Oz has been investigated. The neutron irradiation was found to decrease critical…
Recently, silicon photomultipliers (SiPMs) have been used in several space-borne missions, owing to their solid state, compact size, low operating voltage, and insensitivity to magnetic fields. However, operating SiPMs in space results in…
This study evaluates more than 4,000 tiles made of Hamamatsu visual-sensitive silicon photomultipier (SiPM), each with dimensions of 5 $\times$ 5 cm$^2$, intended for the central detector of the Taishan Anti-neutrino Observatory (TAO), a…
A Lead Tungstate crystal produced for the electromagnetic calorimeter of the CMS experiment at the LHC was cut into three equal-length sections. The central one was irradiated with 290 MeV/c positive pions up to a fluence of (5.67 +-…
The effect of electron irradiation with the energy of 2.5 MeV on the temperature dependences of the resistivity of an optimally doped $YBa_2Cu_3O_{7-\delta}$ single crystal has been studied. The temperature dependences of both fluctuation…
This paper proposes an automatic procedure, based on ROOT data Analysis Framework, for the analysis of Silicon Photomultipliers (SiPM) characteristics. In particular, it can be used to analyze experimental waveforms, from oscilloscope,…
In our Ultra-Fast Astronomy (UFA) program, we aim to improve measurements of variability of astronomical targets on millisecond and shorter time scales. In this work, we present initial on-sky measurements of the performance of silicon…