Related papers: Radiation damage uniformity in a SiPM
The Hamamatsu UV-light enhanced 64-channel SiPM array of the newest generation (S13361-3050AS-08) has been examined for the purpose of being used for the Silicon Elementary Cell Add-on (SiECA) of the EUSO-SPB balloon experiment.…
Graphite, as a material for high-temperature gas-cooled reactors (HTGR), will be exposed to harsh environment. The stability of graphite structure under irradiation is of a key importance for efficiency, reliability and security of the…
The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…
Diamond is a promising candidate for enhancing the negative-ion surface production in the ion sources for neutral injection in fusion reactors; hence evaluation of its reactivity towards hydrogen plasma is of high importance. High quality…
Spontaneous fission in americium and plutonium isotopes was investigated using high-resolution gamma spectrometry. This process was investigated through analysis of a certified PuO2 sample spectrum obtained from the IAEA database of…
Neutron and x-ray diffraction techniques have been used to study the competing long and short-range polar order in the relaxor ferroelectric Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ (PMN) under a [111] applied electric field. Despite reports of a…
The last decade has increasingly seen the use of silicon photomultipliers (SiPMs) instead of photomultiplier tubes (PMTs). This is due to various advantages of the former on the latter like its smaller size, lower operating voltage, higher…
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of…
$^{1}S_{0}$ \textit{nn}-scattering length has been measured in the \textit{nd}-breakup reaction at 60 MeV. The experiment was performed in the final state interaction geometry with registration of all three secondary particles. The…
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…
The analysis of all published results on electrons and holes impact ionization coefficients in 4H-SiC at 300K have been performed. It is shown that the most plausible approximation of dependencies $\alpha_{n,p}$ on the electric field…
Radiation damage on front-end readout and trigger electronics is an important issue in the COMET Phase-I experiment at J-PARC, which plans to search for the neutrinoless transition of a muon to an electron. To produce an intense muon beam,…
We report on the design and characterization of a prototype monolithic neutron scatter camera that is intended to significantly improve upon the geometrical shortcomings of conventional neutron cameras. The detector consists of a 50 mm…
Silicon photomultipliers (SiPMs) are a good alternative to photomultiplier tubes (PMTs) because their gain and quantum efficiency are comparable to PMTs. However, the largest single-chip SiPM is still less than 1~cm$^2$. In order to use…
The A/Z dependence of projectile fragmentation at relativistic energies has been studied with the ALADIN forward spectrometer at SIS. A stable beam of 124Sn and radioactive beams of 124La and 107Sn at 600 MeV per nucleon have been used in…
In this letter we present the effect of neutron irradiation up to fluences of 3.9 1019 n/cm2 on the superconducting properties of MgB2. In order to obtain a disorder structure homogeneously distributed, the experiment was carried out on…
The Faddeev technique is employed to study the influence of both particle-particle and particle-hole phonons on the one-hole spectral function of 16O. The formalism includes the effects of nuclear fragmentation and accounts for collective…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
Pendell\"{o}sung interference fringes of a single silicon crystal were observed by using pulsed cold neutrons. The nuclear scattering length of silicon was obtained as (4.159\pm0.003(stat.)\pm0.028(syst.)) fm using the observed…
Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed…