Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100{\deg}C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
@article{arxiv.2412.13124,
title = {Proton irradiation on Hydrogenated Amorphous Silicon flexible devices},
author = {M. Menichelli and S. Aziz and A. Bashiri and M. Bizzarri and C. Buti and L. Calcagnile and D. Calvo and M. Caprai and D. Caputo and A. P. Caricato and R. Catalano and M. Cazzanelli and R. Cirio and G. A. P. Cirrone and F. Cittadini and T. Croci and G. Cuttone and G. de Cesare and P. De Remigis and S. Dunand and M. Fabi and L. Frontini and C. Grimani and M. Guarrera and H. Hasnaoui and M. Ionica and K. Kanxheri and M. Large and F. Lenta and V. Liberali and N. Lovecchio and M. Martino and G. Maruccio and L. Maruccio and G. Mazza and A. G. Monteduro and A. Morozzi and A. Nascetti and S. Pallotta and A. Papi and D. Passeri and M. Pedio and M. Petasecca and G. Petringa and F. Peverini and P. Placidi and M. Polo and A. Quaranta and G. Quarta and S. Rizzato and F. Sabbatini and L. Servoli and A. Stabile and C. Talamonti and J. E. Thomet and M. S. Vasquez Mora and M. Villani and R. J. Wheadon and N. Wyrsch and N. Zema and L. Tosti},
journal= {arXiv preprint arXiv:2412.13124},
year = {2024}
}
Comments
This paper was presented at the IEEE-RTSD2024 in Tampa (USA) with presentation number: R08-04