Related papers: DEPFET Active Pixel Sensors
Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…
Currently the heavy flavour factory KEKB located at the KEK accelerator centre in Tsukuba, Japan, is being upgraded to the Super KEKB factory, aiming for a substantially higher luminosity of 8x10^35 cm^-2 s^-1. This by a factor of 40…
MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for…
A new type of gaseous micropattern particle detector based on a closed-cell microcavity plasma panel sensor is reported. The first device was fabricated with 1 x 1 x 2 mm cells. It has shown very clean signals of 0.6 to 2.5 volt amplitude,…
Multi-pixel fast silicon detectors represent the enabling technology for the next generation of space-borne experiments devoted to high-resolution spectral-timing studies of low-flux compact cosmic sources. Several imaging detectors based…
Complex-field imaging is indispensable for numerous applications at wavelengths from X-ray to THz, with amplitude describing transmittance (or reflectivity) and phase revealing intrinsic structure of the target object. Coherent diffraction…
The monitoring of accelerations is essential for a variety of applications ranging from inertial navigation to consumer electronics. The basic operation principle of an accelerometer is to measure the displacement of a flexibly mounted test…
A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different…
We introduce the concept of `hyperpixels' in which each element of a pixel filter array (suitable for CMOS image sensor integration) has a spectral transmission tailored to a target spectral component expected in application-specific…
Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics. Telecom-wavelength…
A novel concept to enhance the photo-detection efficiency (PDE) of silicon photomultipliers (SiPMs) has been applied and remarkable positive results can be reported. This concept uses arrays of microlenses to cover every second SiPM pixel…
Single photon sensitivity is an important property of certain detection systems. This work investigated the single photon sensitivity of the Adaptive Gain Integrating Pixel Detector (AGIPD) and its dependence on possible detector noise…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
We introduce Focal Split, a handheld, snapshot depth camera with fully onboard power and computing based on depth-from-differential-defocus (DfDD). Focal Split is passive, avoiding power consumption of light sources. Its achromatic optical…
This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and…
The development of large-area homogeneous photo-detectors with sub-millimeter path lengths for direct Cherenkov light and for secondary-electrons opens the possibility of large time-of-flight systems for relativistic particles with…
The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking…
We have developed a large CdTe pixel detector with dimensions of 23.7 x 13.0 mm and a pixel size of 448 x 448 um^2. The detector is based on recent technologies of an uniform CdTe single crystal, a two-dimensional ASIC, and stud…
High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size…