Related papers: DEPFET Active Pixel Sensors
The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started…
We present the design and characterisation of a low-noise, resonant input transimpedance amplified photodetector. The device operates at a resonance frequency of $90 \,\textrm{MHz}$ and exhibits an input referred current noise of…
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point,…
We present a scalable in-pixel processing architecture that can reduce the data throughput by 10X and consume less than 30 mW per megapixel at the imager frontend. Unlike the state-of-the-art (SOA) analog process-in-pixel (PIP) that…
A study of identification properties of a Si-Si DE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated…
Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range.…
Image sensors with internal computing capability enable in-sensor computing that can significantly reduce the communication latency and power consumption for machine vision in distributed systems and robotics. Two-dimensional semiconductors…
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…
The capacitance of the charge collection node of a sensor system is an important parameter for the design of the analog front-end electronics. The analog front-end of high-granularity sensors like for example hybrid pixel detectors need to…
A plug-and-play PhotonPix single-photon detector with a logical signal output is developed for applications requiring ultimate timing precision down to 10 ps over a wide dynamic photon flux range. The heart of the detector is an Exosens…
We introduce the fully-depleted charge-coupled device (CCD) as a particle detector. We demonstrate its low energy threshold operation, capable of detecting ionizing energy depositions in a single pixel down to 50 eVee. We present results of…
The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer…
The detective quantum efficiency (DQE) and normalised noise power spectrum (NNPS) of the Timepix4 hybrid pixel detector in event-driven mode in TEM have been measured at 100 kV and 200 kV. In a raw data readout mode, the zero-frequency DQE…
The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of high resolution, low material, fast readout and low power. The Monolithic Active Pixel Sensor (MAPS) technology has been…
Scientific CCDs designed in thick high resistivity silicon (Si) are excellent detectors for astronomy, high energy and nuclear physics, and instrumentation. Many applications can benefit from CCDs ultra low noise readout systems. The…
It is challenging to implement genuine free running single photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for…
The design and evaluation on the NSLS-II beamline of the 3FI application specific integrated circuit (ASIC) bump-bonded to a simply, planar, two-dimensionally segmented silicon sensor is presented. The ASIC was developed for Full-Field…
In this paper, a low-noise CMOS image sensor with enhanced dynamic range (DR), using an in-pixel chopping technique, is presented. The proposed in-pixel chopping technique is used to reduce the low-frequency or 1/f noise of the source…
Cryogenic opto-electronic interconnects are gaining increasing interest as a means to control and read out cryogenic electronic components. The challenge is to achieve sufficient signal integrity with low heat load processing. In this…