Related papers: DEPFET Active Pixel Sensors

This paper presents an FeFET-based active pixel sensor that performs in-sensor multiply-and-accumulate (MAC) operations by leveraging the multi-domain polarization states of ferroelectric layers. The proposed design integrates a…

We have developed a silicon pixel detector to enhance the physics capabilities of the PHENIX experiment. This detector, consisting of two layers of sensors, will be installed around the beam pipe at the collision point and covers a…

The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of…

The Belle II experiment currently under construction at the $e^+e^-$-collider SuperKEKB in Japan is designed to explore new physics beyond the standard model with an approximately 50 times larger data sample compared to its predecessor. The…

In-camera event denoising reduces the data rate of event cameras by filtering out noise at the source. A lightweight multilayer perceptron denoising filter (MLPF) provides state-of-the-art low-cost denoising accuracy. It processes a small…

The Speedster-EXD is a new 64x64 pixel, 40 $\mu$m pixel pitch, 100 $\mu$m depletion depth hybrid CMOS X-ray detector (HCD) with the capability of reading out only those pixels containing event charge, thus enabling fast effective frame…

The use of highly sensitive pixelated direct detectors has dramatically improved the performance of high energy instrumentation such as transmission electron microscopy. Here, we describe a recently developed monolithic active pixel sensor…

We have developed image intensifier tubes with delay-anode read-out for time- and position-sensitive photon counting. The timing precision is better than 1 ns with 1000x1000 pixels position resolution and up to one megacounts/s processing…

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when…

We develop a novel algorithm for characterizing Deep Sub-Electron Read Noise (DSERN) image sensors. This algorithm is able to simultaneously compute maximum likelihood estimates of quanta exposure, conversion gain, bias, and read noise of…

We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with…

We describe the development, operation, and application of the 4D Camera -- a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at approximately 480…

The ALPS II experiment, Any Light Particle Search II at DESY in Hamburg, will look for light (m< 10-4 eV) new fundamental bosons (e.g., axion-like particles, hidden photons and other WISPs) in the next years by the mean of a…

The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$…

Pixel tracking detectors at upcoming collider experiments will see unprecedented charged-particle densities. Real-time data reduction on the detector will enable higher granularity and faster readout, possibly enabling the use of the pixel…

We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…

Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…

We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…