English

Performance of Irradiated RD53A 3D Pixel Sensors

Instrumentation and Detectors 2019-09-04 v2 High Energy Physics - Experiment

Abstract

The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of 50×50 μm2\mathrm{50 \times 50~\mu m^{2}} and 25×100 μm2\mathrm{25 \times 100~\mu m^{2}} compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to 5×1015 neq/cm2\mathrm{5 \times 10^{15}~n_{eq}/cm^{2}}. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.

Keywords

Cite

@article{arxiv.1903.04838,
  title  = {Performance of Irradiated RD53A 3D Pixel Sensors},
  author = {S. Terzo and M. Chmeissani and G. Giannini and S. Grinstein and M. Manna and G. Pellegrini and D. Quirion and D. Vazquez Furelos},
  journal= {arXiv preprint arXiv:1903.04838},
  year   = {2019}
}