Related papers: Three-species drift-diffusion models for memristor…
A system of degenerate drift-diffusion equations for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a three-dimensional bounded domain with mixed…
The existence of global weak solutions to a partial-differential-algebraic system is proved. The system consists of the drift-diffusion equations for the electron, hole, and oxide vacancy densities in a memristor device, the Poisson…
An instationary drift-diffusion system for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet-Neumann boundary conditions. The…
The large-time asymptotics of the density matrix solving a drift-diffusion-Poisson model for the spin-polarized electron transport in semiconductors is proved. The equations are analyzed in a bounded domain with initial and Dirichlet…
A system of drift-diffusion equations with electric field under Dirichlet boundary conditions is analyzed. The system of strongly coupled parabolic equations for particle density and spin density vector describes the spin-polarized…
A simplified transient energy-transport system for semiconductors subject to mixed Dirichlet-Neumann boundary conditions is analyzed. The model is formally derived from the non-isothermal hydrodynamic equations in a particular vanishing…
An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly…
The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models…
We consider a nonlinear drift-diffusion system for multiple charged species in a porous medium in 2D and 3D with periodic microstructure. The system consists of a transport equation for the concentration of the species and Poisson's…
A transient Poisson-Nernst-Planck system with steric effects is analyzed in a bounded domain with no-flux boundary conditions for the ion concentrations and mixed Dirichlet-Neumann boundary conditions for the electric potential. The steric…
In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the…
We investigate the three-dimensional compressible Euler-Maxwell system, a model for simulating the transport of electrons interacting with propagating electromagnetic waves in semiconductor devices. First, we show the global well-posedness…
In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D) materials have demonstrated promising potential for…
A Wigner-Poisson kinetic equation describing charge transport in doped semiconductor superlattices is proposed. Electrons are supposed to occupy the lowest miniband, exchange of lateral momentum is ignored and the electron-electron…
Because the local concentration of vacancies in any material is bounded, their motion must be accompanied by nonlinear effects. Here we look for such effects in a simple model for electric field driven vacancy motion in memristors, solving…
We present a unique compact model for oxide memristors, based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction…
We are interested in the discretisation of a drift-diffusion system in the framework of hybrid finite volume (HFV) methods on general polygonal/polyhedral meshes. The system under study is composed of two anisotropic and nonlinear…
The global-in-time existence and uniqueness of bounded weak solutions to a spinorial matrix drift-diffusion model for semiconductors is proved. Developing the electron density matrix in the Pauli basis, the coefficients (charge density and…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit…