A Finite-Volume Scheme for a Spinorial Matrix Drift-Diffusion Model for Semiconductors
Abstract
An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly coupled equations for the charge and spin-vector densities, coupled to the Poisson equation for the elec-tric potential. The equations are solved in a bounded domain with mixed Dirichlet-Neumann boundary conditions. The charge and spin-vector fluxes are approximated by a Scharfetter-Gummel discretization. The main features of the numerical scheme are the preservation of positivity and L bounds and the dissipation of the discrete free energy. The existence of a bounded discrete solution and the monotonicity of the discrete free energy are proved. For undoped semiconductor materials, the numerical scheme is uncon-ditionally stable. The fundamental ideas are reformulations using spin-up and spin-down densities and certain projections of the spin-vector density, free energy estimates, and a discrete Moser iteration. Furthermore, numerical simulations of a simple ferromagnetic-layer field-effect transistor in two space dimensions are presented.
Keywords
Cite
@article{arxiv.1502.05639,
title = {A Finite-Volume Scheme for a Spinorial Matrix Drift-Diffusion Model for Semiconductors},
author = {Claire Chainais-Hillairet and Ansgar Jüngel and Polina Shpartko},
journal= {arXiv preprint arXiv:1502.05639},
year = {2015}
}