Uniform L $\infty$ estimates for approximate solutions of the bipolar drift-diffusion system
Numerical Analysis
2017-02-22 v1
Abstract
We establish uniform L bounds for approximate solutions of the drift-diffusion system for electrons and holes in semiconductor devices, computed with the Schar-fetter-Gummel finite-volume scheme. The proof is based on a Moser iteration technique adapted to the discrete case.
Cite
@article{arxiv.1702.06300,
title = {Uniform L $\infty$ estimates for approximate solutions of the bipolar drift-diffusion system},
author = {Marianne Bessemoulin-Chatard and Claire Chainais-Hillairet and Ansgar Jüngel},
journal= {arXiv preprint arXiv:1702.06300},
year = {2017}
}