On a drift-diffusion system for semiconductor devices
Analysis of PDEs
2016-11-23 v1
Abstract
In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as .
Cite
@article{arxiv.1603.03839,
title = {On a drift-diffusion system for semiconductor devices},
author = {Rafael Granero-Belinchón},
journal= {arXiv preprint arXiv:1603.03839},
year = {2016}
}
Comments
to appear in Annales Henri Poincar\'e