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An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly…

Numerical Analysis · Mathematics 2015-02-20 Claire Chainais-Hillairet , Ansgar Jüngel , Polina Shpartko

In this paper, we study the large--time behavior of a numerical scheme discretizing drift-- diffusion systems for semiconductors. The numerical method is finite volume in space, implicit in time, and the numerical fluxes are a…

Numerical Analysis · Mathematics 2019-04-22 Marianne Bessemoulin-Chatard , Claire Chainais-Hillairet

We propose a finite volume scheme for convection-diffusion equations with nonlinear diffusion. Such equations arise in numerous physical contexts. We will particularly focus on the drift-diffusion system for semiconductors and the porous…

Numerical Analysis · Mathematics 2012-02-10 Marianne Bessemoulin-Chatard

In this paper, we propose a finite-volume scheme for aggregation-diffusion equations based on a Scharfetter--Gummel approximation of the quadratic, nonlocal flux term. This scheme is analyzed concerning well-posedness and convergence…

Numerical Analysis · Mathematics 2021-05-12 André Schlichting , Christian Seis

In this paper, we explore the convergence of the semi-discrete Scharfetter-Gummel scheme for the aggregation-diffusion equation using a variational approach. Our investigation involves obtaining a novel gradient structure for the finite…

Numerical Analysis · Mathematics 2024-12-23 Anastasiia Hraivoronska , André Schlichting , Oliver Tse

This work establishes the relaxation limit from the bipolar Euler-Poisson system to the bipolar drift-diffusion system, for data so that the latter has a smooth solution. A relative energy identity is developed for the bipolar fluid system…

Analysis of PDEs · Mathematics 2024-04-16 Nuno J. Alves , Athanasios E. Tzavaras

We obtain uniform in time $L^\infty$-bounds for the solutions to a class of thermo-diffusive systems. The nonlinearity is assumed to be at most sub-exponentially growing at infinity and have a linear behavior near zero.

Analysis of PDEs · Mathematics 2023-04-19 Joonhyun La , Jean-Michel Roquejoffre , Lenya Ryzhik

An implicit Euler finite-volume scheme for general cross-diffusion systems with volume-filling constraints is proposed and analyzed. The diffusion matrix may be nonsymmetric and not positive semidefinite, but the diffusion system is assumed…

Numerical Analysis · Mathematics 2021-05-13 Ansgar Jüngel , Antoine Zurek

Due to extreme difficulties in numerical simulations of Euler-Maxwell equations, which are caused by the highly complicated structures of the equations, this paper concerns the simplification of Euler-Maxwell system through the…

Analysis of PDEs · Mathematics 2023-12-13 Rui Jin , Yachun Li , Liang Zhao

We propose a new scheme for the long time approximation of a diffusion when the drift vector field is not globally Lipschitz. Under this assumption, regular explicit Euler scheme --with constant or decreasing step-- may explode and implicit…

Probability · Mathematics 2018-02-20 Vincent Lemaire

In this paper, we are interested in the numerical approximation of the classical time-dependent drift-diffusion system near quasi-neutrality. We consider a fully implicit in time and finite volume in space scheme, where the…

Numerical Analysis · Mathematics 2019-04-22 Marianne Bessemoulin-Chatard , Claire Chainais-Hillairet , Marie-Hélène Vignal

The existence of global weak solutions to a partial-differential-algebraic system is proved. The system consists of the drift-diffusion equations for the electron, hole, and oxide vacancy densities in a memristor device, the Poisson…

Analysis of PDEs · Mathematics 2025-07-30 Ansgar Jüngel , Tuan Tung Nguyen

In this paper, we will provide the the finite element method for the electro-osmotic flow in micro-channels, in which a convection-diffusion type equation is given for the charge density $\rho^e$. A time-discrete method based on the…

Numerical Analysis · Mathematics 2026-03-26 Yunxia Wang , Zhiyong Si

We consider a stationary drift-diffusion system with ionic charge carriers and external generation of electron and hole charge carriers. This system arises, among other applications, in the context of semiconductor modeling for perovskite…

Analysis of PDEs · Mathematics 2025-12-01 Dilara Abdel , Alain Blaustein , Claire Chainais-Hillairet , Maxime Herda , Julien Moatti

An implicit Euler finite-volume scheme for a nonlocal cross-diffusion system on the multidimensional torus is analyzed. The equations describe the dynamics of population species with repulsive or attractive interactions. The numerical…

Numerical Analysis · Mathematics 2026-01-06 Ansgar Jüngel , Panchi Li , Zhiwei Sun

Electro-thermal transport phenomena in semiconductors are described by the non-isothermal drift-diffusion system. The equations take a remarkably simple form when assuming the Kelvin formula for the thermopower. We present a novel,…

Computational Physics · Physics 2020-08-21 Markus Kantner , Thomas Koprucki

In the present paper initial problems for the semilinear integro-differential diffusion equation and system are considered. The analogue of Duhamel principle for the linear integro-differential diffusion equation is proved. The results on…

Analysis of PDEs · Mathematics 2021-10-05 Meiirkhan Borikhanov , Berikbol T. Torebek

Existence and local-uniqueness theorems for weak solutions of a system consisting of the drift-diffusion-Poisson equations and the Poisson-Boltzmann equation, all with stochastic coefficients, are presented. For the numerical approximation…

Analysis of PDEs · Mathematics 2017-04-05 Leila Taghizadeh , Amirreza Khodadadian , Clemens Heitzinger

The large-time asymptotics of the density matrix solving a drift-diffusion-Poisson model for the spin-polarized electron transport in semiconductors is proved. The equations are analyzed in a bounded domain with initial and Dirichlet…

Analysis of PDEs · Mathematics 2019-08-28 Philipp Holzinger , Ansgar Jüngel

In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the…

Analysis of PDEs · Mathematics 2016-11-23 Rafael Granero-Belinchón
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