Nonlinear effects in memristors with mobile vacancies
Abstract
Because the local concentration of vacancies in any material is bounded, their motion must be accompanied by nonlinear effects. Here we look for such effects in a simple model for electric field driven vacancy motion in memristors, solving the corresponding nonlinear Burgers' equation with impermeable nonlinear boundary conditions analytically. We find non-monotonous relaxation of the resistance while switching between the stable (``on''/``off'') states of the memristor; and qualitatively different film thickness dependencies of switching time (under applied current) and relaxation time (under no current). Our exact solution can serve as a useful benchmark for simulations of more complex memristor models.
Cite
@article{arxiv.2004.04465,
title = {Nonlinear effects in memristors with mobile vacancies},
author = {Irina V. Boylo and Konstantin L. Metlov},
journal= {arXiv preprint arXiv:2004.04465},
year = {2021}
}
Comments
5 pages, 3 figures (v2: clarifications/improvements as per referee comments and other minor changes)