Related papers: Defect free strain relaxation of microcrystals on …
Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3…
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in…
We investigate the hetero-epitaxial growth of thin film deposited on a (001) substrate via molecular dynamics simulations, using six fcc transition metals as our modeling systems. By studying the radial distribution function in the film…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si)…
Scanning electron microscopy (SEM) based electron channeling contrast imaging (ECCI) is used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial interface between ZnS and GaP grown by molecular beam…
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge…
In dislocation-free martensites the components of the elastic strain tensor are constrained by the Saint-Venant compatibility condition which guarantees continuity of the body during external loading. However, in dislocated materials the…
We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
New structure data for the high-temperature diluted magnetic semiconductor Si:Mn, synthesized by laser method are presented. The higher resolution transmission electron microscopy and diffraction was applied in two crystal directions of…
Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This strategy lowers the Ge diffusion coefficient to 5.6-7% of…
The fabrication of flexible single-crystalline plasmonic or photonic components in a scalable way is fundamentally important to flexible electronic and photonic devices with high speed, high energy efficiency, and high reliability. However,…
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity.…
The doped topological insulator Cu$_x$Bi$_2$Se$_3$ has attracted considerable attention as a new platform for studying novel properties of spin-triplet and topological superconductivity. In this work, we performed synchrotron x-ray…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable…
Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate.…
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice…
A consistent, small scale description of plastic motion in a crystalline solid is presented based on a phase field description. By allowing for independent mass motion given by the phase field, and lattice distortion, the solid can remain…