Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated strained-Ge on Si platform for mid-infrared integrated optics.
@article{arxiv.1705.06832,
title = {Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications},
author = {Alban Gassenq and Kevin Guilloy and Nicolas Pauc and Denis Rouchon and Julie Widiez and Johan Rothman and Jean-Michel Hartmann and Alexei Chelnokov and Vincent Reboud and Vincent Calvo},
journal= {arXiv preprint arXiv:1705.06832},
year = {2017}
}