Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
@article{arxiv.1603.06370,
title = {Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering},
author = {Samuel Tardif and Alban Gassenq and Kevin Guilloy and Nicolas Pauc and Guilherme Osvaldo Dias and Jean-Michel Hartmann and Julie Widiez and Thomas Zabel and Esteban Marin and Hans Sigg and Jérôme Faist and Alexei Chelnokov and Vincent Reboud and Vincent Calvo and Jean-Sébastien Micha and Odile Robach and François Rieutord},
journal= {arXiv preprint arXiv:1603.06370},
year = {2016}
}