Related papers: Scalable, Highly Crystalline, 2D Semiconductor Ato…
Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly…
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…
Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand…
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…
Conformal Atomic Layer Deposition (ALD) of nanoparticles is an now an established nanofabrication concept employed by many researchers for applications such as creating diffusion barriers, tuning catalysis, or masking a toxic particle core…
In the past decade, nanopores have been developed extensively for various potential applications, and their performance greatly depends on the surface properties of the nanopores. Atomic layer deposition (ALD) is a new technology for…
Passivating lithium ion battery electrode surfaces to prevent electrolyte decomposition is critical for battery operations. Recent work on conformal atomic layer deposition (ALD) coating of anodes and cathodes has shown significant…
This article explores the recent advancements in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) and their potential applications in various fields, including nanoelectronics, photonics, sensing, energy storage,…
We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with…
Two-dimensional (2D) van der Waals semiconductors show promise for atomically thin flexible and transparent optoelectronic devices in future technologies.However, developing high-performance field-effect transistors (FETs) based on 2D…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
Two-dimensional (2D) Transition Metal Chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number,…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…
Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) is a versatile class of quantum materials of interest to various fields including, e.g., nanoelectronics, optical devices, and topological and correlated quantum matter. Tailoring…
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with…
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However,…