The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

Han Liu; Kun Xu; Xujie Zhang; Peide D. Ye

doi:10.1063/1.3703595

The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

Mesoscale and Nanoscale Physics 2012-06-07 v1 Materials Science

Authors: Han Liu , Kun Xu , Xujie Zhang , Peide D. Ye

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Abstract

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.

Keywords

atomic layer deposition high-k dielectric two-dimensional crystals boron nitride molybdenum disulfide initial growth Lennard-Jones potential

Cite

@article{arxiv.1202.3391,
  title  = {The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition},
  author = {Han Liu and Kun Xu and Xujie Zhang and Peide D. Ye},
  journal= {arXiv preprint arXiv:1202.3391},
  year   = {2012}
}

Comments

submitted to Appl. Phys. Lett

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