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Semiconductor dopant profiling using secondary electron imaging in a scanning electron microscope (SEM) has been developed in recent years. In this paper, we show that the mechanism behind it also allows mapping of the electric potential of…
Creating arbitrary light patterns finds applications in various domains including lithography, beam shaping, metrology, sensing and imaging. We study the formation of high-contrast light patterns that are obtained by transmission through an…
This chapter of "The Oxford Handbook of Nanoscience and Technology: Frontiers and Advances" reviews nonequilibrium Green function (NEGF) approach to modeling spin current generation, transport, and detection in semiconductor nanostructures…
The optical properties of chromophores can be efficiently tuned by electrostatic fields generated in their close environment, a phenomenon that plays a central role for the optimization of complex functions within living organisms where it…
Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few Mohm level. Meanwhile,…
Programmable electron-beam scanning offers new opportunities to improve dose efficiency and suppress scan-induced artifacts in scanning transmission electron microscopy. Here, we systematically benchmark the impact of non-raster…
It is important for modern scanning microwave microscopes to overcome the effect of the surface roughness. Here, we report microwave conductivity imaging of the phase-separated iron chalcogenide K$_x$Fe$_y$Se$_2$ ($x=0.8$, $y=1.6$-$2$), in…
Scanning Electron Microscopy (SEM) is indispensable in modern materials science, enabling high-resolution imaging across a wide range of structural, chemical, and functional investigations. However, SEM imaging remains constrained by…
In this work, we investigate the relationship between the Seebeck coefficient $(S)$, and the differential entropy per particle (DEP, $s$), as a tool for characterizing charge carriers in two-dimensional systems. Using armchair silicene…
Scanning transmission electron microscopy (STEM) is widely used tool for materials characterisation. However, being a scanned technique, STEM is susceptible to sample, stage or beam drift, manifesting as distortions within images or…
We analyze the quantum limit of sensitivity in four-dimensional scanning transmission electron microscopy (4D-STEM), which has emerged as a favored technique for imaging the structure of a wide variety of materials, including biological and…
Spin pumping is becoming an established method to generate voltages from magnetic dynamics. The standard detection method of spin pumping is based on open circuit voltage measurement across ferromagnetic (FM) and non-magnetic (NM)…
In this paper we develop an analytical framework for the study of electrochemical impedance of mixed ionic and electronic conductors (MIEC). The framework is based on first-principles and it features the coupling of electrochemical…
We develop a microscopic theory for the spin Seebeck effect (SSE) in N\'eel and canted phases of antiferromagnetic insulators. We calculate the DC spin current tunneling from the antiferromagnet to an attached metal, incorporating the…
We demonstrate assembly of di-, tri- and tetrameric Si clusters on the graphene surface using sub-atomically focused electron beam of a scanning transmission electron microscope. Here, an electron beam is used to introduce Si substitutional…
Forescatter electron imaging is a popular microscopy technique, especially for scanning electron microscopes equipped with an electron backscatter diffraction detector. In principal, this method enables qualitative imaging of microstructure…
To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark…
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes…
Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding…
Insight in the structure of nanoparticle assemblies up to a single particle level is key to understand the collective properties of these assemblies, which critically depend on the individual particle positions and orientations. However,…