Mapping of ion beam induced current changes in FinFETs

C. D. Weis; A. Schuh; A. Batra; A. Persaud; I. W. Rangelow; J. Bokor; C. C. Lo; S. Cabrini; D. Olynick; S. Duhey; T. Schenkel

doi:10.1016/j.nimb.2009.01.019

Mapping of ion beam induced current changes in FinFETs

Other Condensed Matter 2015-05-13 v2 Materials Science

Authors: C. D. Weis , A. Schuh , A. Batra , A. Persaud , I. W. Rangelow , J. Bokor , C. C. Lo , S. Cabrini , D. Olynick , S. Duhey , T. Schenkel

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Abstract

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

Keywords

radiation damage in silicon accelerator physics

Cite

@article{arxiv.0809.2113,
  title  = {Mapping of ion beam induced current changes in FinFETs},
  author = {C. D. Weis and A. Schuh and A. Batra and A. Persaud and I. W. Rangelow and J. Bokor and C. C. Lo and S. Cabrini and D. Olynick and S. Duhey and T. Schenkel},
  journal= {arXiv preprint arXiv:0809.2113},
  year   = {2015}
}

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IBMM 2008 conference proceeding

Mapping of ion beam induced current changes in FinFETs

Abstract

Keywords

Cite

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