To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark effect (QCSE), the field-induced red-shift and broadening of the strong excitonic absorption resonances characteristic of low-dimensional semiconductor structures. Here we show an unprecedentedly strong transverse electroabsorption (EA) signal in a monolayer of the two-dimensional semiconductor MoS2. The EA spectrum is dominated by an apparent linewidth broadening of around 15% at a modulated voltage of only Vpp = 0.5 V. Contrary to the conventional QCSE, the signal increases linearly with the applied field strength and arises from a linear variation of the distance between the strongly overlapping exciton and trion resonances. The achievable modulation depths exceeding 0.1 dBnm-1 bear the scope for extremely compact, ultrafast, energy-efficient EAMs for integrated photonics, including on-chip optical communication.
@article{arxiv.1607.00558,
title = {Electroabsorption in MoS$_2$},
author = {Daniele Vella and Dmitry Ovchinnikov and Nicola Martino and Victor Vega-Mayoral and Dumitru Dumcenco and Yen-Chen Kung and Maria-Rosa Antognazza and Andras Kis and Guglielmo Lanzani and Dragan Mihailovic and Christoph Gadermaier},
journal= {arXiv preprint arXiv:1607.00558},
year = {2017}
}