Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…
We propose a spintronic strain sensor capable of sensing strain with a sensitivity of 1E-13/sqrt{Hz} at room temperature with an active sensing area of 1 cmE2 and power dissipation of 1 watt. This device measures strain by monitoring the…
The robustness of current and voltage references to process, voltage and temperature (PVT) variations is paramount to the operation of integrated circuits in real-world conditions. However, while recent voltage references can meet most of…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…
Sensor nodes and IoT systems require blocks that not only consume low power but also have good accuracy. Voltage reference generators are also considered important building blocks in sensor interface circuits. This paper presents a solution…
The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…
On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…
This paper reports on the systematic electromechanical characterization of a new three-axial force sensor used in dimensional metrology of micro components. The siliconbased sensor system consists of piezoresistive mechanicalstress…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…
Resistance thermometry provides a time-tested method for taking temperature measurements. However, fundamental limits to resistance-based approaches has produced considerable interest in developing photonic temperature sensors to leverage…
Flexible strain sensors are critical to several potential intelligent applications, such as human-machine interfaces, soft robotics, human motion detection, and safety monitoring of components. Stretchable functional materials are important…
High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…
We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and…
This paper presents a fully-integrated CMOS voltage reference designed in a 90 nm process node using low voltage threshold (LVT) transistor models. The voltage reference leverages subthreshold operation and near-weak inversion…
We propose a new type of a transition edge sensor based on an Al/AlOx/Ti/AlOx/Al superconductor - insulator - superconductor - insulator - superconductor (SIS'IS) structure. It exhibits sharp dependence of zero bias resistance on…
We describe a transducer for low-temperature atomic force microscopy based on electromechanical coupling due to a strain-dependent kinetic inductance of a superconducting nanowire. The force sensor is a bending triangular plate (cantilever)…
In many applications, the ability of current references to cope with process, voltage, and temperature (PVT) variations is critical to maintaining system-level performance. However, temperature-independent current references operating in…
We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating…