Related papers: High precision scalable power converter for accele…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
The recent advances in power plants and energy resources have extended the applications of DC-DC converters in the power systems (especially in the context of DC micro-grids). Parameter identification can extract the parameters of the…
In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…
High resolution resistors capable of detecting minuscule currents are vital for advanced sensors, but existing off-shelf models struggle with inconsistent resistance under varying voltages. The underlying physics of this issue is rooted in…
We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…
The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…
A 33.6 ps LSB Time-to-Digital converter was designed in 130 nm BiCMOS technology. The core of the converter is a differential 9-stage ring oscillator, based on a multi-path architecture. A novel version of this design is proposed, along…
This paper proposes a drive train topology with a dynamically reconfigurable dc battery, which breaks hard-wired batteries into smaller subunits. It can rapidly control the output voltage and even contribute to voltage shaping of the…
A 6bit flash-ADC with 1.2GSps, wide analog bandwidth and low power, realized in a standard digital 0.13 $\mu$m CMOS copper technology is presented. Employing capacitive interpolation gives various advantages when designing for low power: no…
Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an…
We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow,…
This article is present high precision multiwave rectifier circuit operating in low voltage plus or minus 1.5 Volt current modes by CMOS technology 0.5 \mum, receive input and give output in current mode, respond at high frequency period.…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…
Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide band gap makes it an…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
This paper discusses a 100 W single stage Power Factor Correction (PFC) flyback converter operating in boundary mode constant ON time methodology using a synchronous MOS-FET rectifier on the secondary side to achieve higher efficiency.…
The upgrade of the ATLAS Liquid Argon Calorimeter readout system calls for the development of radiation tolerant, high speed and low power serializer ASIC. We have designed a phase locked loop using a commercial 0.25 um Silicon-on-Sapphire…
In this paper, we will introduce a new designed direct conversion terahertz detector and we will compare its characteristics with a prefabricated design in order to obtain better performance of our new proposed design. Differences between…