Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an external DC electric field. The relatively longer decoherence times were observed by the electric echo measurement in a low boron dopant concentration Si sample. The scalable acceptor-based system is a promising candidate of the charge qubit for quantum computing.
@article{arxiv.1012.1078,
title = {Manipulation and decoherence of acceptor charge qubit in silicon},
author = {Y. P. Song and B. Golding},
journal= {arXiv preprint arXiv:1012.1078},
year = {2015}
}
Comments
This paper has been withdrawn by the author due to a crucial sign error in equation 1 This paper has been withdrawn by the author due to major revision