Related papers: Electrically pumped blue laser diodes with nanopor…
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to…
N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with…
This paper reports on the quasi-three-level continuous wave laser operation based on waveguide structures in neodymium doped calcium niobium gallium garnet disordered crystal. Laser wavelength selection through the waveguide cross section…
Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam…
We report on the experimental observation of up to 11.5 ${\mu}m$ deep charge depletion in (010), (110), and (011) ${\beta}-Ga_2O_3$ epitaxial layers due to ion damage from sputtering and inductively coupled plasma (ICP) etching processes…
Lanthanide-based upconversion nanoparticles (UCNPs) generally require high power laser excitation. Here we report wide-field upconversion microscopy at single-nanoparticle sensitivity using incoherent excitation of a 970-nm light-emitting…
Recently there is an increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum…
We report on the observation of backward lasing at 391.4 nm of nitrogen ions pumped by linearly polarized intense femtosecond pulses at 800 nm. The strongly enhanced spectral intensity at 391.4 nm, as well as the amplification of an…
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through…
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried…
Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is…
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF$_6$ plasma and trimethylaluminum (Al(CH$_3$)$_3$, TMA). ALE was observed at temperatures greater than 200 $^\circ$C, with a…
Silicon anodes offer high energy densities for next-generation lithium-ion batteries; however, their application is limited by severe volume expansion during cycling. Making silicon porous or nanostructured mitigates this expansion but…
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high…
Reduced-dimensional CsPbBr$_3$ nanoplatelets (NPLs) are promising candidates for color-saturated blue emitters, yet their electroluminescence performance is hampered by non-radiative recombination, which is associated with bromine…
Nanoporosity in silicon leads to completely new functionalities of this mainstream semiconductor. A difficult to assess mechanics has however significantly limited its application in fields ranging from nanofluidics and biosensorics to drug…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…
Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity…