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Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate…

Mesoscale and Nanoscale Physics · Physics 2014-01-21 B. Gharekhanlou , S. Khorasani , R. Sarvari

A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon…

Applied Physics · Physics 2020-12-02 Jing Wu , Xiaofeng Zhao , Yibo Liu , Dianzhong Wen

Recent developments in the domain of electronic materials and devices have attracted the interest of researchers toward flexible and printable electronic components like organic transistors, printable electrodes and sensors. Zinc Oxide…

Instrumentation and Detectors · Physics 2023-07-27 Manisha Kumari , Rakesh K. Prasad , Manish K. Singh , Parameswar K. Iyer , Dilip K. Singh

With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the…

Emerging Technologies · Computer Science 2019-08-28 Yerlan Amanzholov , Olga Krestinskaya

A novel room temperature capacitance-to-phase transducer is described, which uses a modified All-Pass filter architecture combined with a simple series resonant tank circuit with a moderate Q-factor. It is fashioned from a discrete inductor…

Instrumentation and Detectors · Physics 2023-12-29 Frank J. van Kann , Alexey V. Veryaskin

An extremely sensitive temperature measurement MEMS device is developed based on the principle of structural deflection in a bi-material cantilever caused by a difference in thermal expansion coefficients. A dual-beam asymmetrical geometry…

Instrumentation and Detectors · Physics 2012-08-27 Yi Zheng

For glucose electrochemical sensors, a comprehensive electronics interface is designed and constructed in 0.18 um, CMOS process technology, and 1.5 V supply voltage. This interface includes a programmable readout amplifier and bandgap…

Systems and Control · Electrical Eng. & Systems 2023-05-23 Riyaz Ahmad , Amit M. Joshi , Dharmendra Boolchandani

We present the coupled oscillator: a new mechanism for signal amplification with widespread application in metrology. We introduce the mechanical theory of this framework, and support it by way of simulations. We present a particular…

Applied Physics · Physics 2024-05-24 Ian Bouche , Josh Javor , Abhishek Som , David K. Campbell , David J. Bishop

We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a…

Mesoscale and Nanoscale Physics · Physics 2017-12-13 Yanjun Xu , Yumeng Yang , Ziyan Luo , Baoxi Xu , Yihong Wu

Temperature, pressure, and magnetic field dependencies of the resistivity of BaVS$_3$ were measured above the critical pressure of $p_{cr}$=2 GPa, which is associated with the zero temperature insulator-to-metal (MI) transition. The…

Strongly Correlated Electrons · Physics 2007-12-21 N. Barišić , A. Akrap , H. Berger , L. Forró

To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted…

This paper deals with the design of MEMS using piezoresistivity as transduction principle. It is demonstrated that when the sensor topology doesn't allow a perfect matching of strain gauges, the resolution is limited by the ability of the…

Other Computer Science · Computer Science 2008-12-18 El Mehdi Boujamaa , Yannick Soulie , Frédérick Mailly , Laurent Latorre , Pascal Nouet

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…

We propose a new type of a transition edge sensor based on an Al/AlOx/Ti/AlOx/Al superconductor - insulator - superconductor - insulator - superconductor (SIS'IS) structure. It exhibits sharp dependence of zero bias resistance on…

Mesoscale and Nanoscale Physics · Physics 2014-09-03 Timothé Faivre , Dmitry Golubev , Jukka P. Pekola

Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…

Mesoscale and Nanoscale Physics · Physics 2021-08-03 Farshid Raissi , Mina Amirmazlaghani , Ali Rajabi

We demonstrate continuous tuning of the squeezing level generated in a double-ring optical parametric oscillator by externally controlling the coupling condition using electrically controlled integrated microheaters. We accomplish this by…

Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…

Computational Physics · Physics 2025-08-05 H. F. Feng , Z. Y. Xu , B. Liu , Zhi-Xin Guo

We describe the construction and operation of a two-channel noise detection system for measuring power and cross spectral densities of current fluctuations near 2 MHz in electronic devices at low temperatures. The system employs cryogenic…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 L. DiCarlo , Y. Zhang , D. T. McClure , C. M. Marcus , L. N. Pfeiffer , K. W. West

Optimizing sensor readout schemes and integrated circuit designs for both open-loop and closed-loop implementations requires precise modeling and simulation strategies. This study introduces a novel two-port impedance model to estimate the…

Recent theoretical results obtained by Barybin and Santos have suggested that the dynamic admittance of the $p-n$-junction is proportional to the modified Bessel function of the first kind which depend on an amplitude of ac signal. This…

Mesoscale and Nanoscale Physics · Physics 2016-08-31 Edval J. P. Santos , Anatoly A. Barybin