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In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth…
We report transport studies through Nb-based superconducting meander wires fabricated by focused ion beam (FIB) milling technique. The effect of meandering on quantum transport has been probed experimentally by a direct comparison with the…
We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$…
We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified…
Magnetization, nuclear magnetic resonance, high-resolution x-ray diffraction and magnetic field-dependent neutron diffraction measurements reveal a novel magnetic ground state of Ba{0.60}K{0.40}Mn2As2 in which itinerant ferromagnetism (FM)…
MoS$_2$ field-effect transistors (FETs) with high-\textit{k} oxides currently lag behind silicon standards in bias and temperature stability due to ubiquitous border oxide traps that cause clockwise (CW) hysteresis in gate transfer…
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise…
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and…
Controlled variation of the electronic properties of 2D materials by applying strain has emerged as a promising way to design materials for customized applications. Using first principles density functional theory calculations, we show that…
The longitudinal and transverse voltages (resistances) have been measured for MgB$_2$ in zero external magnetic fields. Samples were prepared in the form of thin film and patterned into the usual Hall bar shape. In close vicinity of the…
Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…
The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for…
Dilute magnetic semiconductors (DMS) are nonmagnetic semiconductors doped with magnetic transition metals. The recently discovered DMS material (Ba$_{1-x}$K$_{x}$)(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ offers a unique and versatile control of…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…