The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multi-layered processors, both being critical thermal bottlenecks. To shed light into fundamental aspects of this problem, here we report the first direct measurement of spatially resolved temperature in functioning 2D monolayer MoS2 transistors. Using Raman thermometry we simultaneously obtain temperature maps of the device channel and its substrate. This differential measurement reveals the thermal boundary conductance (TBC) of the MoS2 interface (14 ± 4 MWm−2K−1) is an order magnitude larger than previously thought, yet near the low end of known solid-solid interfaces. Our study also reveals unexpected insight into non-uniformities of the MoS2 transistors (small bilayer regions), which do not cause significant self-heating, suggesting that such semiconductors are less sensitive to inhomogeneity than expected. These results provide key insights into energy dissipation of 2D semiconductors and pave the way for the future design of energy-efficient 2D electronics.
@article{arxiv.1704.08270,
title = {Energy Dissipation in Monolayer MoS$_2$ Electronics},
author = {Eilam Yalon and Connor J. McClellan and Kirby K. H. Smithe and Miguel Muñoz Rojo and Runjie and Xu and Saurabh V. Suryavanshi and Alex J. Gabourie and Christopher M. Neumann and Feng Xiong and Amir B. Farimani and Eric Pop},
journal= {arXiv preprint arXiv:1704.08270},
year = {2019}
}