Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

R. Thamankar; T. L. Yap; K. E. J. Goh; C. Troadec; C. Joachim

doi:10.1063/1.4818998

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Mesoscale and Nanoscale Physics 2015-06-16 v1 Materials Science

Authors: R. Thamankar , T. L. Yap , K. E. J. Goh , C. Troadec , C. Joachim

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Abstract

Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution scanning electron microscope. The MoS_2 surface shows a surface electronic gap (E_S) of 1.4eV measured at a probe separation of 50nm. Furthermore, the two- probe resistance measured outside the electronic gap shows 2D-like behavior with the two-probe separation.

Keywords

electronic transport MoS_2 surface low temperature scanning tunneling microscope surface electronic gap two-probe resistance

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@article{arxiv.1308.3299,
  title  = {Low Temperature Nanoscale Electronic Transport on the MoS_2 surface},
  author = {R. Thamankar and T. L. Yap and K. E. J. Goh and C. Troadec and C. Joachim},
  journal= {arXiv preprint arXiv:1308.3299},
  year   = {2015}
}

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16 pages, 3 figures

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Abstract

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