Related papers: Engineering single donor detectors in doped silico…
Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this…
We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under…
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the…
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with…
Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes.…
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…
Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable…
We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is…
Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…
Recent experimental efforts have led to considerable interest in donor-based localized electron spins in Si as viable qubits for a scalable silicon quantum computer. With the use of isotopically purified $^{28}$Si and the realization of…