Related papers: Engineering single donor detectors in doped silico…
Although the dynamics of charge transfer (CT) processes can be probed with ultimate lifetime resolution, the helplessness to control CT at the nanoscale constitutes one of the most important road-blocks to revealing some of its deep…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous…
We characterize the single-electron energies and the wavefunction structure of arrays with two, three, and four phosphorus atoms in silicon by implementing atomistic tight-binding calculations and analyzing wavefunction overlaps to identify…
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present…
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The…
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables…
We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter…
Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information…
We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by…
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target…
We have fabricated and characterized a new type of electrometer that couples two parallel single-electron transistors (SETs) to a radio-frequency tank circuit for use as a differential RF-SET. We demonstrate operation of this device in…
In this paper, a carbon nanotube (CNT) based single-ion detector is proposed and its performance is evaluated with atomistic quantum transport models. The sensor can detect any ion type without molecule-specific functionalization and allows…
Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of…
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…