Related papers: Engineering single donor detectors in doped silico…
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect…
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with…
Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early…
We propose to continuously monitor a charge qubit by utilizing a T-shaped double quantum dot detector, in which the qubit and double dot are arranged in such a unique way that the detector turns out to be particularly susceptible to the…
Donor-based spin qubit offers a promising silicon quantum computing route for building large-scale qubit arrays, attributed to its long coherence time and advancements in nanoscale donor placement. However, the state-of-the-art device…
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes…
This paper shows single electron transistor at room temperature,created on macroscopic system-the two-dimensional large area surface of our hydrogenated diamond like carbon thin film. Our results, free from the limitation of lowering the…
We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential…
This work presents a fully discrete, low cost digital isolator requiring no specialized ICs and implemented entirely with general purpose transistors and a two layer PCB embedded air core transformer. The design avoids vendor lock in and…
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the…
The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor (SMT) was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the…
We construct a doped holographic superconductor in the Gubser-Rocha model, and realize a superconducting dome in the middle of the temperature-doping phase diagram. It is worth noting that unlike the previous researches, the profile of our…
We increase the isolation of a superconducting double dot from its environment by galvanically isolating it from any electrodes. We probe it using high frequency reflectometry techniques, find 2e-periodic behaviour, and characterise the…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…
Cooper pair splitters hold utility as a platform for investigating the entanglement of electrons in Cooper pairs, but probing splitters with voltage-biased Ohmic contacts prevents the retention of electrons from split pairs since they can…
Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing…
In this review, we present an overview of four proof-of-concept of single-atom transistors based on four technologies : Atom doping, Single electron transistors, Single-atom metallic wire and Multilevel atomic-scale switching. Techniques…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…