Related papers: Theory and computation of Hall scattering factor i…
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and…
We analyze the scattering sector of the Hamiltonians for both gapless and gapped graphene in the presence of a charge impurity using the 2D Dirac equation, which is applicable in the long wavelength limit. We show that for certain range of…
We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution.…
Materials subjected to a magnetic field exhibit the Hall effect, a phenomenon studied and understood in fine detail. Here we report a qualitative breach of this classical behavior in electron systems with high viscosity. The viscous fluid…
We develop a theory for the energy relaxation of hot Dirac fermions in graphene. We obtain a generic expression for the energy relaxation rate due to electron-phonon interaction and calculate the power loss due to both optical and acoustic…
The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at…
Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is…
Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…
We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically…
By measuring the Hall coefficient R_H up to 1000 K in La_2CuO_4, Pr_{1.3}La_{0.7}CuO_4, and La_{2-x}Sr_xCuO_4 (LSCO), we found that the temperature (T) dependence of R_H in LSCO for x = 0 - 0.05 at high temperature undoubtedly signifies a…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that…
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct…
Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far…
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…
We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…
We predict that graphene is a unique system where disorder-assisted scattering (supercollisions) dominates electron-lattice cooling over a wide range of temperatures, up to room temperature. This is so because for momentum-conserving…
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…
We study, by means of a Monte Carlo simulator, the hot phonon effect on the relaxation dynamics in photoexcited graphene and its quantitative impact as compared to considering an equilibrium phonon distribution. Our multi-particle approach…
We study the Hall effect in a system of weakly coupled Luttinger Liquid chains, using a Memory function approach to compute the Hall constant in the presence of umklapp scattering along the chains. In this approximation, the Hall constant…