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In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in…

Materials Science · Physics 2023-07-05 Rohit Kumar , Anup Kumar Mandia , Anuja Singh , Bhaskaran Muralidharan

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

Mesoscale and Nanoscale Physics · Physics 2012-05-28 Dong-Keun Ki , Dongchan Jeong , Jae-Hyun Choi , Kee-Su Park , Hu-Jong Lee

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

Mesoscale and Nanoscale Physics · Physics 2011-11-14 Jun Yan , Michael S. Fuhrer

The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole…

Materials Science · Physics 2015-06-25 Daniel Errandonea , J. F. Sánchez-Royo , A. Segura , A. Chevy , L. Roa

Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only…

Materials Science · Physics 2018-03-21 Nien-En Lee , Jin-Jian Zhou , Luis A. Agapito , Marco Bernardi

We determine the Hall conductivity of light-driven graphene, with specific focus on its frequency dependence, and compare it to the static effective approximation, based on Floquet states. This approximation gives the Haldane model as the…

Mesoscale and Nanoscale Physics · Physics 2021-12-20 M. Nuske , L. Mathey

Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry…

Mesoscale and Nanoscale Physics · Physics 2017-02-01 Tue Gunst , Kristen Kaasbjerg , Mads Brandbyge

This short theoretical review deals with some essential ingredients for the understanding of the quantum Hall effect in graphene in comparison with the effect in conventional two-dimensional electron systems with a parabolic band…

Mesoscale and Nanoscale Physics · Physics 2012-02-03 M. O. Goerbig

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 T. Stauber , N. M. R. Peres , F. Guinea

Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 N. M. R. Peres , J. M. B. Lopes dos Santos , T. Stauber

Both transport $\tau_{tr}$ and elastic scattering times $\tau_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 M. Monteverde , C. Ojeda-Aristizabal , R. Weil , K. Bennaceur , M. Ferrier , S. Gueron , C. Glattli , H. Bouchiat , J. N. Fuchs , D. Maslov

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor…

Mesoscale and Nanoscale Physics · Physics 2008-07-01 R. Danneau , F. Wu , M. F. Craciun , S. Russo , M. Y. Tomi , J. Salmilehto , A. F. Morpurgo , P. J. Hakonen

We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking…

Mesoscale and Nanoscale Physics · Physics 2008-02-09 F. V. Tikhonenko , D. W. Horsell , R. V. Gorbachev , A. K. Savchenko

We investigate the Hall effect in a quasi one-dimensional system made of weakly coupled Luttinger Liquids at half filling. Using a memory function approach, we compute the Hall coefficient as a function of temperature and frequency in the…

Strongly Correlated Electrons · Physics 2007-12-04 G. León , C. Berthod , T. Giamarchi

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission.…

Materials Science · Physics 2011-09-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a…

Strongly Correlated Electrons · Physics 2012-07-19 Atsuo Shitade , Naoto Nagaosa

Recent theory has demonstrated that the value of the electron-phonon coupling strength $\lambda$ can be extracted directly from the thermal attenuation (Debye-Waller factor) of Helium atom scattering reflectivity. This theory is here…

Materials Science · Physics 2021-04-21 G. Benedek , J. R. Manson , S. Miret-Artés

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for…

Mesoscale and Nanoscale Physics · Physics 2014-01-16 S. Gattenloehner , W. -R. Hannes , P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin , M. Titov

The mechanisms causing the reduction in lattice thermal conductivity in highly P- and B-doped Si are looked into in detail. Scattering rates of phonons by point defects, as well as by electrons, are calculated from first principles. Lattice…

Materials Science · Physics 2019-10-02 Bonny Dongre , Jesús Carrete , Shihao Wen , Jinlong Ma , Wu Li , Natalio Mingo , Georg K. H. Madsen

We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…