Related papers: Theory and computation of Hall scattering factor i…
Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low…
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
Properties of phonons - quanta of the crystal lattice vibrations - in graphene have attracted strong attention of the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature while…
Hotspot is a ubiquitous phenomenon in microdevices/chips. In homogeneous nanoscale graphene disk with a hotspot, a graded thermal conductivity is observed previously even when the system size is fixed. However, the underlying physical…
Viscous phenomena are the hallmark of the hydrodynamic flow exhibited by Dirac fermions in clean graphene at high enough temperatures. We report a quantitative calculation of the electronic shear and Hall viscosities in graphene based on…
The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate and transport properties (diffusion coefficient…
Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…
The problem of phonon scattering by strain fields caused by Stone-Wales (SW) defects in graphene is studied in the framework of the deformation potential approach. An explicit form of the phonon mean free path due to phonon-SW scattering is…
We study the quantum Hall effect in a monolayer graphene by using an approach based on thermodynamical properties. This can be done by considering a system of Dirac particles in an electromagnetic field and taking into account of the edges…
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is…
The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual…
GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in…
A generalized Dirac equation is derived in order to describe charge carriers moving in corrugated graphene, which is the case for temperatures above 10{\deg}K due to the presence of flexural phonons. Such interaction is taken into account…
In graphene, which is an atomic layer of crystalline carbon, two of the distinguishing properties of the material are the charge carriers two-dimensional and relativistic character. The first experimental evidence of the two-dimensional…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…
The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related…
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…
In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in…