Related papers: Augmented Memory Computing: Dynamically Augmented …
We introduce \emph{Adaptive RAG Memory} (ARM), a retrieval-augmented generation (RAG) framework that replaces a static vector index with a \emph{dynamic} memory substrate governed by selective remembrance and decay. Frequently retrieved…
Conventional 6T SRAM is used in microprocessors in the cache memory design. The basic 6T SRAM cell and a 6 bit memory array layout are designed in LEdit. The design and analysis of key SRAM components, sense amplifiers, decoders, write…
Computing-in-memory (CIM) has attracted significant attentions in recent years due to its massive parallelism and low power consumption. However, current CIM designs suffer from large area overhead of small CIM macros and bad programmablity…
As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…
The memristor is promising to be the basic cell of next-generation computation systems. Compared to the traditional MOSFET device, the memristor is efficient over energy and area. But one of the biggest challenges faced with researchers is…
Gain Cell memory (GCRAM) offers higher density and lower power than SRAM, making it a promising candidate for on-chip memory in domain-specific accelerators. To support workloads with varying traffic and lifetime metrics, GCRAM also offers…
As the High Performance Computing world moves towards the Exa-Scale era, huge amounts of data should be analyzed, manipulated and stored. In the traditional storage/memory hierarchy, each compute node retains its data objects in its local…
Ternary Deep Neural Networks (DNN) have shown a large potential for highly energy-constrained systems by virtue of their low power operation (due to ultra-low precision) with only a mild degradation in accuracy. To enable an…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…
Deep learning hardware designs have been bottlenecked by conventional memories such as SRAM due to density, leakage and parallel computing challenges. Resistive devices can address the density and volatility issues, but have been limited by…
SRAM-based compute-in-memory (CIM) offers high computational density and energy efficiency for deep neural network (DNN) accelerators, but its limited capacity causes on/off-chip data movement overhead for large DNN models. Existing CIM…
This paper describes a multi-functional deep in-memory processor for inference applications. Deep in-memory processing is achieved by embedding pitch-matched low-SNR analog processing into a standard 6T 16KB SRAM array in 65 nm CMOS. Four…
State space models (SSMs) have recently emerged as a powerful framework for long sequence processing, outperforming traditional methods on diverse benchmarks. Fundamentally, SSMs can generalize both recurrent and convolutional networks and…
The rapid development of Artificial Intelligence (AI) and Internet of Things (IoT) increases the requirement for edge computing with low power and relatively high processing speed devices. The Computing-In-Memory(CIM) schemes based on…
Neural networks powered with external memory simulate computer behaviors. These models, which use the memory to store data for a neural controller, can learn algorithms and other complex tasks. In this paper, we introduce a new memory to…
We propose a dynamic computational time model to accelerate the average processing time for recurrent visual attention (RAM). Rather than attention with a fixed number of steps for each input image, the model learns to decide when to stop…
Stochastic computing (SC) offers hardware simplicity but suffers from low throughput, while high-throughput Digital Computing-in-Memory (DCIM) is bottlenecked by costly adder logic for matrix-vector multiplication (MVM). To address this…
Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) -…
We propose overcoming the memory capacity limitation of GPUs with high-capacity Storage-Class Memory (SCM) and DRAM cache. By significantly increasing the memory capacity with SCM, the GPU can capture a larger fraction of the memory…