Related papers: GaAs quantum dots grown by droplet etching epitaxy…
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to…
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number…
Photons are central to quantum technologies, with photonic qubits offering a promising platform for quantum communication. Semiconductor quantum dots stand out for their ability to generate single photons on demand, a key capability for…
We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the…
In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed…
Achieving deterministic placement of self-assembled quantum dots (QDs) during epitaxial growth is essential for the reliable and efficient fabrication of high-quality single-photon sources and solid-state cavity quantum electrodynamics…
A quantum dot strongly coupled to a photonic crystal has been recently proposed as a source of entangled photon pairs [R. Johne et al., Phys. Rev. Lett. 100, 240404 (2008)]. The biexction decay via intermediate polariton states can be used…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic…
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which…
This study investigates the performance of droplet-etched GaAs quantum dots (QDs) integrated into micropillar structures using a deterministic fabrication technique. We demonstrate a unity QD positioning yield across 74 devices and…
A source of entangled photons that emits one, and only one, pair of photons on demand has now been realized in a semiconductor chip. The solid-state source will be a useful resource for experiments in optical quantum information.
Optical parametric oscillators are among the best-developed quantum light sources, having already been adopted in precision measurement and underpinning various quantum computing and communication paradigms. Meanwhile, progress in photonic…
The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown…
The ability to generate entangled states of light is a key primitive for quantum communication and distributed quantum computation. Continuously driven sources, including those based on spontaneous parametric downconversion, are usually…
Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never…
Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their…
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…
Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large…
On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive…