Related papers: GaAs quantum dots grown by droplet etching epitaxy…
GaAs quantum dots grown by droplet etching epitaxy are high-quality solid-state sources of quantum light. Despite implementation in devices that exploit quantum phenomenon, a comprehensive review on the crystal growth of quantum dots grown…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and…
A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot…
The generation and long-haul transmission of highly entangled photon pairs is a cornerstone of emerging photonic quantum technologies, with key applications such as quantum key distribution and distributed quantum computing. However, a…
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the…
The development of scalable sources of non-classical light is fundamental to unlock the technological potential of quantum photonics\cite{Kimble:Nat2008}. Among the systems under investigation, semiconductor quantum dots are currently…
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy…
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots…
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit…
Single photon sources, which are compatible with quantum memories are an important component of quantum networks. In this article, we show optical investigations on isolated GaAs/Al$_{0.25}$Ga$_{0.75}$As quantum dots grown via droplet…
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…
The integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much of attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several…
Significant progress in quantum light sources for quantum communication applications requires reproducible and symmetric quantum emitters acting as single-photon sources capable of generating entangled photons on demand at specific telecom…
A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates,…
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…
The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible…
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…
Entangled photon generation from semiconductor quantum dots via the biexciton-exciton cascade underlies various decoherence mechanisms related to the solid-state nature of the quantum emitters. So far, this has prevented the demonstration…
We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the…