High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Sergio Bietti; Francesco Basso Basset; Artur Tuktamyshev; Emiliano Bonera; Alexey Fedorov; Stefano Sanguinetti

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Mesoscale and Nanoscale Physics 2019-08-08 v1

Authors: Sergio Bietti , Francesco Basso Basset , Artur Tuktamyshev , Emiliano Bonera , Alexey Fedorov , Stefano Sanguinetti

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Abstract

We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modelled.

Keywords

droplet epitaxy quantum dots GaAs/AlGaAs high-temperature growth arsenization dynamics quantum photonics

Cite

@article{arxiv.1908.02506,
  title  = {High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots},
  author = {Sergio Bietti and Francesco Basso Basset and Artur Tuktamyshev and Emiliano Bonera and Alexey Fedorov and Stefano Sanguinetti},
  journal= {arXiv preprint arXiv:1908.02506},
  year   = {2019}
}

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18 pages, 5 figures

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Abstract

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