Related papers: Non-Hysteretic Condition in Negative Capacitance J…
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…
The double-layer Heisenberg antiferromagnet with intra- and inter-layer couplings $J$ and $J_\perp$ exhibits a zero temperature quantum phase transition between a quantum disordered dimer phase for $g>g_c$ and a Neel phase with long range…
We prove stability for a class of heterogeneous catalysis models in the $L_p$-setting. We consider a setting in a finite three-dimensional pore of cylinder-like geometry, with the lateral walls acting as a catalytic surface. Under a…
This paper presents a new \b{eta}-Ga2O3 junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (\b{eta}DG-JL-FET) that a P+ packet embedded in the oxide layer (PO-\b{eta}DG-JL-FET) for high-voltage applications. Our goal…
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
The stability of the superconducting dissipationless and resistive states in single-crystalline NbSe2 nanobelts is characterized by transport measurements in an external magnetic field (H). Current-driven electrical measurements show…
The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance…
We numerically investigate dynamic critical behaviors of two-dimensional (2D) Josephson-junction arrays with positional disorder in the scheme of the resistively shunted junction dynamics. Large-scale computation of the current voltage…
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and…
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and…
Understanding the non-equilibrium behavior of stainless steel under extreme electronic excitation remains a critical challenge for laser processing and radiation science. We employ a hybrid framework integrating density-functional tight…
The possible occurrence of crystalline or inhomogeneous phases in the QCD phase diagram at large chemical potential has been under investigation for over thirty years. Such phases are present in models of QCD such as the Gross-Neveu model…
We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Using the correlative method of unsymmetrized self-consistent field for strongly anharmonic crystals, the thermodynamic stability and the mechanism its loss is studied for crystals with various types of the chemical bond. The following…
We consider a single molecule circuit embedded into solvent. The Born dielectric solvation model is combined with Keldysh nonequilibrium Green's functions to describe the electron transport properties of the system. Depending on the…
We analyze the non-equilibrium steady states (NESS) of a one dimensional harmonic chain of $N$ atoms with alternating masses connected to heat reservoirs at unequal temperatures. We find that the temperature profile defined through the…
Resistivity and thermoelectric power (TEP) measurements on CeFe$_2$ and two of its pseudo-binaries Ce(Fe, 5% Ir)$_2$ and Ce(Fe, 7% Ru)$_2$ between 78K and 275K are reported. The resistivity data are analysed in terms of contributions from…
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm node" that comes two nodes after the industry "3nm node,"…