Related papers: Non-Hysteretic Condition in Negative Capacitance J…
Catalyst-free vertically aligned graphene nanoflakes possessing a large amount of high density edge planes were functionalized using nitrogen species in a low energy N+ ion bombardment process to achieve pyridinic, cyanide and nitrogen…
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we…
Superconducting weak link (WL), acting as a Josephson junction (JJ), is one of the widely used elements in superconductor science and quantum circuits. A hysteretic JJ with robust switching between its superconducting and resistive state is…
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D electrical and geometrical confinements of carrier charge…
Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
We report on experiments performed in vacuum and at cryogenic temperatures on a tri-port nano-electro-mechanical (NEMS) device. One port is a very non-linear capacitive actuation, while the two others implement the magnetomotive scheme with…
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD3), second and third order intermodulation distortion…
$\beta$-Ag$_2$Se is a promising material for room temperature thermoelectric applications and magneto-resistive sensors. However, no attention was paid earlier to the hysteresis in the temperature dependence of resistivity ($\rho$($T$)).…
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…
We study hysteresis in anti-ferromagnetic random-field Ising model at zero temperature. The external field is cycled adiabatically between -$\infty$ and $\infty$. Two different distributions of the random-field are considered, (i) a uniform…
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate…
We experimentally studied the effect of positional disorder on a Josephson junction array with $f = n$, ${1/2} + n$, or ${2/5} + n$ flux quanta per unit cell for integral $n$. This system provides an experimental realization of a…