Related papers: Semiconductor Epitaxy in Superconducting Templates
We report the first observation of superconductivity in heterostructure consisting of an insulating ferroelectric film (Ba$_{0.8}$Sr$_{0.2}$TiO$_3$) grown on an insulating parent compound of La$_2$CuO$_4$ with [001] orientation. The…
Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is…
Density functional calculations were performed to systematically study a series of finite and infinite cluster-assembled silicon nanotubes (SiNTs). One-dimensional SiNTs can be prepared by proper assembly of hydrogenated cage-like silicon…
The fabrication of more and more miniaturized electronic and photonic devices relies on new, ingenious methods for the fabrication of spatially controlled nanostructures. Examples are electronic devices based on semiconducting nanowires and…
Sn(1-x)In(x)Te is a possible candidate for topological superconductivity. Previous work has shown that substitution of In for Sn in the topological crystalline insulator SnTe results in superconductivity, with the transition temperature,…
We report development and microwave characterization of rf SQUID (Superconducting QUantum Interference Device) qubits, consisting of an aluminium-based Josephson junction embedded in a superconducting loop patterned from a thin film of TiN…
Despite tremendous progress in the research on self-assembled nanotechnological building blocks such as macromolecules, nanowires, and two-dimensional materials, synthetic self-assembly methods bridging nanoscopic to macroscopic dimensions…
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a…
Materials capable of highly efficient, direct thermal-to-electric energy conversion would have substantial economic potential. Theory predicts that thermoelectric efficiencies approaching the Carnot limit can be achieved at low temperatures…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of…
We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultra-high…
Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly…
Nanowires (NWs) of topological materials are emerging as an exciting platform to probe and engineer new quantum phenomena that are hard to access in bulk phase. Their quasi-one-dimensional geometry and large surface-to-bulk ratio unlock new…
Topological crystalline insulators (TCIs) host topological phases of matter protected by crystal symmetries. Topological surface states in three-dimensional TCIs have been predicted and observed in IV-VI SnTe-class semiconductors. Despite…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
A third monolayer of tin atoms on the semiconductor substrate Si(111) has been shown to become superconducting upon six to ten percent hole doping. Experiments have reported promising results hinting at a superconducting chiral $d$-wave…
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled…
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 \mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the…