Related papers: Semiconductor Epitaxy in Superconducting Templates
Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here we observed and analyzed the double critical current in the…
Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…
We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN…
Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium…
Two-dimensional (2D) materials have attracted much recent attention because they exhibit various distinct intrinsic properties/functionalities, which are, however, usually not interchangeable. Interestingly, here we propose a generic…
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on…
As a promising candidate system to realize topological superconductivity, the system of a 3D topological insulator (TI) grown on top of the s-wave superconductor has been extensively studied. To access the topological superconductivity…
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned…
Coherent twin boundaries form periodic lamellar twinning in a wide variety of semiconductor nanowires, and are often viewed as near-perfect interfaces with reduced phonon and electron scattering behaviors. Such unique characteristics are of…
Kinetic inductance in thin film superconductors has been used as the basis for low-temperature, low-noise photon detectors. In particular thin films such as NbTiN, TiN, NbN, the kinetic inductance effect is strongly non-linear in the…
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
We present a report on hybrid InSb-Pb nanowires that combine high spin-orbit coupling with a high critical field and a large superconducting gap. Material characterization indicates the Pb layer of high crystal quality on the nanowire side…
Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of…
Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D…
When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena…
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good…
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such as Andreev qubits. For all these applications it is…